Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownPinoutSpecificationsDrain-source voltage .........................VDS max. 80VDrain-source voltage(non-repetitive peak; tp £ 2 ms) ................VDS(SM) max. 100 VGate-source voltage (open drain)...
BSP110: Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownPinoutSpecificationsDrain-source voltage .........................VDS max. 80VDrain-source voltage(non-r...
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Drain-source voltage .........................VDS max. 80V
Drain-source voltage
(non-repetitive peak; tp £ 2 ms) ................VDS(SM) max. 100 V
Gate-source voltage (open drain) .................±VGSO max. 20 V
Drain current (DC).......................... ID max. 325 mA
Drain current (peak)........................ IDM max. 650mA
Total power dissipation up to Tamb = 25 °C (note 1) ........Ptot max. 1.5 W
Storage temperature range ...................Tstg -65 to + 150 °C
Junction temperature .........................Tj max. 150 °C
Note:1. Device mounted on an epoxy printed-circuit board 40 mm X 40 mm X 1.5 mm; mounting pad for the drain lead min. 6 cm2.
N-channel enhancement mode vertical D-MOS transistor BSP110 in a miniature SOT223 envelope and designed for use in telephone ringer circuits and for application in relay, high-speed and line transformer drivers.