Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdowPinoutSpecificationsDrain-source voltage .........................VDS max. 80VGate-source voltage (open drain) .................±VGSO max .20VDrain current (DC)......................... ID max.500 mADrain ...
BSP108: Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdowPinoutSpecificationsDrain-source voltage .........................VDS max. 80VGate-source voltage (open d...
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Drain-source voltage .........................VDS max. 80V
Gate-source voltage (open drain) .................±VGSO max .20V
Drain current (DC)......................... ID max. 500 mA
Drain current (peak)........................ IDM max. 1.0mA
Total power dissipation up to Tamb = 25 °C (note 1)........Ptot max. 1.5 W
Storage temperature range ..................Tstg -65 to + 150 °C
Junction temperature.........................Tj max. 150 °C
Note:1. Device mounted on an epoxy printed-circuit board 40 mm X 40 mm X 1.5 mm; mounting pad for the drain lead min. 6 cm2.
N-channel enhancement mode vertical D-MOS transistor BSP108 in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers.