Features: · Direct interface to C-MOS, TTL, etc. due to low threshold voltage· High-speed switching· No secondary breakdown.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 200 V ±VGSO gate-source voltage ...
BSP107: Features: · Direct interface to C-MOS, TTL, etc. due to low threshold voltage· High-speed switching· No secondary breakdown.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. M...
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VDS |
drain-source voltage |
200 |
V | ||
±VGSO |
gate-source voltage |
open drain |
20 |
V | |
ID |
drain current |
DC |
200 |
mA | |
IDM |
drain current |
peak |
350 |
mA | |
Ptot |
total power dissipation |
up to Tamb = 25 °C |
1.5 |
W | |
Tstg |
storage temperature range |
-65 |
150 |
°C | |
Tj |
operating junction temperature |
150 |
°C |
N-channel enhancement mode vertical D-MOS transistor BSP107 in a miniature SOT223 envelope. Intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer driver switching.