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BSP106

Features: · Very low R DS(on)· Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdown.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 60 V VDG drain-gate voltage 60 ...

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SeekIC No. : 004302278 Detail

BSP106: Features: · Very low R DS(on)· Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdown.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNI...

BSP106 Data Sheet

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Part Number:
BSP106
Supply Ability:
5000

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  • 1~5000
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  • Processing time
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Total Cost: $ 0.00

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Product Details

Description



Features:

· Very low R DS(on)
· Direct interface to C-MOS, TTL, etc.
· High-speed switching
· No secondary breakdown.


Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
60
V

 VDG

 drain-gate voltage

 

 

 60

  
±VGSO
gate-source voltage
open drain
20
V
ID
drain current
DC
425
mA
IDM
drain current
peak
850
mA
Ptot
total power dissipation
up to Tamb = 25 °C
1.5
W
Tstg
storage temperature range
-65
150
°C
Tj
operating junction temperature
150
°C



Description

N-channel enhancement mode vertical D-MOS transistor BSP106 in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers.




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