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BSO604NS2

MOSFET OptiMOS PWR TRANSITR DUAL N-CH ENH MODE

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SeekIC No. : 00156090 Detail

BSO604NS2: MOSFET OptiMOS PWR TRANSITR DUAL N-CH ENH MODE

BSO604NS2 Data Sheet

floor Price/Ceiling Price

US $ .24~.32 / Piece | Get Latest Price
Part Number:
BSO604NS2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1520
  • 1520~2500
  • 2500~5000
  • 5000~10000
  • Unit Price
  • $.32
  • $.27
  • $.25
  • $.24
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 0.035 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DSO-8 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 55 V
Configuration : Dual Dual Drain
Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 0.035 Ohms
Package / Case : DSO-8


Features:

• Dual N-Channel
• Enhancement mode
• Logic Level
•150 °C operating temperature
• Avalanche rated
• dv/dt rated


Specifications

Parameter
Symbol
Values
Unit
Continuous drain current
TA=25°Cone channel active
TA=70°Cone channel active
ID

5
4
A
Pulsed drain current
TA=25°C
I Dpulse

20

Avalanche energy, single pulse
ID=12.7 A , VDD=25V, RGS=25
EAS
90
mJ
Reverse diode dv/dt
IS=12.7A, VDS=24V, di/dt=200A/s, Tjmax=150°C
dv/dt
6
kV/s
Gate source voltage
VGS
±25
V

Power dissipation
TA=25°C

Ptot

2.5

W

Operating and storage temperature
T j , T stg
-55 ... +150
°C
IEC climatic category, DIN IEC 68-1
55/150/56




Parameters:

Technical/Catalog InformationBSO604NS2
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C5A
Rds On (Max) @ Id, Vgs44 mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) @ Vds 870pF @ 25V
Power - Max2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs26nC @ 10V
Package / CaseDSO-8
FET Feature*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names BSO604NS2
BSO604NS2



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