BSO303SP

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : - 30 V
Package / Case : DSO-8
Continuous Drain Current : - 8.9 A
Resistance Drain-Source RDS (on) : 31 m Ohms


Features:

• P-Channel
• Enhancement mode
• Logic Level
• 150°C operating temperature
• Avalanche rated
• dv/dt rated


Specifications

Parameter	Symbol	Values		Unit
Continuous drain current TA=25°C TA=70°C	ID	-8.9 -7.1		A
Pulsed drain current TA=25°C	I Dpulse	-35.6
Avalanche energy, single pulse ID=12.7 A , VDD=25V, RGS=25	EAS	97		mJ
Reverse diode dv/dt IS=12.7A, VDS=24V, di/dt=200A/s, Tjmax=150°C	dv/dt	-6		kV/s
Gate source voltage	VGS	±25		V
Power dissipation TA=25°C	Ptot	2.5		W
Operating and storage temperature	T j , T stg	-55 ... +150		°C
IEC climatic category, DIN IEC 68-1		55/150/56

Parameters:

Technical/Catalog Information	BSO303SP
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	8.9A
Rds On (Max) @ Id, Vgs	21 mOhm @ 8.9A, 10V
Input Capacitance (Ciss) @ Vds	1754pF @ 25V
Power - Max	2.35W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	69nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSO303SP BSO303SP BSO303SPINCT ND BSO303SPINCTND BSO303SPINCT