MOSFET P-CH -20 V -8.2 A
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 8.2 A | ||
Resistance Drain-Source RDS (on) : | 0.021 Ohms | Configuration : | Dual Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DSO-8 | Packaging : | Reel |
Parameter |
Symbol |
Values |
Unit | |
Continuous drain current TA=25°C TA=70°C |
ID |
-8.2 |
A | |
Pulsed drain current TA=25°C |
I Dpulse |
-32.8 | ||
Avalanche energy, single pulse ID=12.7 A , VDD=25V, RGS=25 |
EAS |
97 |
mJ | |
Reverse diode dv/dt IS=12.7A, VDS=24V, di/dt=200A/s, Tjmax=150°C |
dv/dt |
-6 |
kV/s | |
Gate source voltage |
VGS |
±12 |
V | |
Power dissipation |
Ptot |
2 |
W | |
Operating and storage temperature |
T j , T stg |
-55 ... +150 |
°C | |
IEC climatic category, DIN IEC 68-1 |
55/150/56 |