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BSN304

Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdown.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 300 V ±VGSO gate-source voltage open drain 20 V ID...

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SeekIC No. : 004302216 Detail

BSN304: Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdown.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-sourc...

BSN304 Data Sheet

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Part Number:
BSN304
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

· Direct interface to C-MOS, TTL, etc.
· High-speed switching
· No secondary breakdown.


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
300
V
±VGSO
gate-source voltage
open drain
20
V
ID
DC drain current
250
mA
IDM
peak drain current
1
A
Ptot
total power dissipation
up to Tamb = 25 °C; note 1
1
W
Tstg
storage temperature
-65
+150
°C
Tj
operating junction temperature
150
°C

Note:1. Device mounted on an epoxy printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum 10 mm x 10 mm.




Description

N-channel enhancement mode vertical D-MOS transistor BSN304 in a TO-92 variant envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.




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