BSN254A,126

MOSFET N-CH 250V 310MA SOT54

product image

BSN254A,126 Picture
SeekIC No. : 003430705 Detail

BSN254A,126: MOSFET N-CH 250V 310MA SOT54

floor Price/Ceiling Price

Part Number:
BSN254A,126
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: - Manufacturer: NXP Semiconductors
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Typical Resistor Ratio : 4.5 Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 250V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 310mA
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 5 Ohm @ 300mA, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) @ Vgs: -
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 120pF @ 25V
Power - Max: 1W Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92-3    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Power - Max: 1W
Gate Charge (Qg) @ Vgs: -
Drain to Source Voltage (Vdss): 250V
Mounting Type: Through Hole
Manufacturer: NXP Semiconductors
Current - Continuous Drain (Id) @ 25° C: 310mA
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92-3
Input Capacitance (Ciss) @ Vds: 120pF @ 25V
Rds On (Max) @ Id, Vgs: 5 Ohm @ 300mA, 10V
Packaging: Tape & Box (TB)


Parameters:

Technical/Catalog InformationBSN254A,126
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C310mA
Rds On (Max) @ Id, Vgs5 Ohm @ 300mA, 10V
Input Capacitance (Ciss) @ Vds 120pF @ 25V
Power - Max1W
PackagingTape & Box (TB)
Gate Charge (Qg) @ Vgs-
Package / CaseTO-92-3
FET FeatureLogic Level Gate
Drawing Number568; SOT54; ; 5
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BSN254A,126
BSN254A,126



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
View more