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BSM200GAR120DN2

IGBT Modules 1200V 200A GAR CH

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SeekIC No. : 00142167 Detail

BSM200GAR120DN2: IGBT Modules 1200V 200A GAR CH

BSM200GAR120DN2 Data Sheet

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Part Number:
BSM200GAR120DN2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Product : IGBT Silicon Modules Configuration : Single
Collector- Emitter Voltage VCEO Max : 1200 V Collector-Emitter Saturation Voltage : 2.5 V
Continuous Collector Current at 25 C : 290 A Gate-Emitter Leakage Current : 400 nA
Power Dissipation : 1.4 KW Maximum Operating Temperature : + 150 C
Package / Case : HB 200GAR    

Description

Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Configuration : Single
Gate-Emitter Leakage Current : 400 nA
Collector-Emitter Saturation Voltage : 2.5 V
Continuous Collector Current at 25 C : 290 A
Power Dissipation : 1.4 KW
Package / Case : HB 200GAR


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