BSM200GA120DN2S, US $ 70.65-78.5 , Infineon Technologies, BSM200GA120DN2S DataSheet download, circuit diagram from SeekIC.com

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BSM200GA120DN2S: IGBT Transistors 1200V 200A SINGLE

BSM200GA120DN2S Data Sheet

US $ 70.65~78.5 / Piece | Get Latest Price

Part Number:: BSM200GA120DN2S
Mfg:: Infineon Technologies
Supply Ability:: 5000

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$78.5
$70.65

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15 Days

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BSM200GA120D evaluate
DescriptionThe BSM200GA120D is one kind of IGBT-modules. The absolute maximum ratings of the BSM20...
BSM200GA120DLC evaluate
US $67.21 - 74.68 / Piece

IGBT Modules 1200V 200A SINGLE
BSM200GA120DLCS evaluate
US $67.21 - 74.68 / Piece

IGBT Modules 1200V 200A SINGLE

Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	1200 V
Collector-Emitter Saturation Voltage :	2.5 V	Maximum Gate Emitter Voltage :	+/- 20 V
Continuous Collector Current at 25 C :	200 A	Gate-Emitter Leakage Current :	200 nA
Power Dissipation :	1550 W	Maximum Operating Temperature :	+ 150 C
Package / Case :	IS6a ( 62 mm )-5

Description

Packaging :
Maximum Operating Temperature : + 150 C
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Continuous Collector Current at 25 C : 200 A
Collector-Emitter Saturation Voltage : 2.5 V
Gate-Emitter Leakage Current : 200 nA
Power Dissipation : 1550 W
Package / Case : IS6a ( 62 mm )-5

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BSM200GA120DN2S

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