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BSH301

Features: · 40 mW on-state resistance at 2.5 V gate drive· RDSon rating down to 1.8 V· ESD gate protectionApplication· Li-Ion safety switch· Power managePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per FET VDS drain-source voltage (DC) ...

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SeekIC No. : 004302151 Detail

BSH301: Features: · 40 mW on-state resistance at 2.5 V gate drive· RDSon rating down to 1.8 V· ESD gate protectionApplication· Li-Ion safety switch· Power managePinoutSpecifications SYMBOL PARAMET...

BSH301 Data Sheet

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Part Number:
BSH301
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Description



Features:

· 40 mW on-state resistance at 2.5 V gate drive
· RDSon rating down to 1.8 V
· ESD gate protection


Application

· Li-Ion safety switch
· Power manage


Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
 Per FET          
VDS
drain-source voltage (DC)
20
V
VGSO
gate-source voltage (DC)
 
±8
V
ID
drain current (DC)
Ts = 80 °C; note 1
5
A
IDM
peak drain current
note 2
20
A
Ptot
total power dissipation
TS = 80 °C; note 3
1.75
W
Tamb = 25 °C; note 4
1.85
W
Tamb = 25 °C; note 5
0.95
W
Tstg
storage temperature
-55
+150
°C
Tj
operating junction temperature
-55
+150
°C

1. TS is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Maximum permissible dissipation per transistor. Both devices may be loaded up to 3.5 W at the same time.
4. Maximum permissible dissipation per transistor. Device mounted on a printed-circuit board with R th a-tp (ambient to tie-point) of 27.5 °C/W.
5. Maximum permissible dissipation per transistor. Device mounted on a printed-circuit board with R th a-tp (ambient to tie-point) of 90 °C/W.




Description

Two N-channel enhancement mode MOS transistors BSH301 in an 8-pin plastic TSSOP8 package.


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