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BSH121

Features: · TrenchMOS™ technology· Very fast switching· Low threshold voltage· Subminiature surface mount package.Application· Battery management· High speed switch· Logic level translator.Specifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj...

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SeekIC No. : 004302143 Detail

BSH121: Features: · TrenchMOS™ technology· Very fast switching· Low threshold voltage· Subminiature surface mount package.Application· Battery management· High speed switch· Logic level translator.Spe...

BSH121 Data Sheet

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Part Number:
BSH121
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· TrenchMOS™ technology
· Very fast switching
· Low threshold voltage
· Subminiature surface mount package.


Application

· Battery management
· High speed switch
· Logic level translator.


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150 - 55 V
VDGR drain-gate voltage (DC) Tj = 25 to 150 ; RGS = 20 k - 55 V
VGS gate-source voltage (DC) - ±8 V
ID drain current (DC) Tsp = 25 ; VGS = 4.5 V;
Figure 2 and 3		 - 300 mA
Tsp = 100 ; VGS = 4.5 V; Figure 2 194 mA
IDM peak drain current Tsp = 25 ; pulsed; tp 10 s; Figure 3 - 1.2 W
Ptot total power dissipation Tsp = 25 ; Figure 1 -65 0.7
Tstg storage temperature -65 +150
Tj operating junction temperature   +150  
Source-drain diode
IS source (diode forward) current (DC) Tsp = 25

- 		300
A
ISM peak source (diode forward) current Tsp = 25 ; pulsed; tp 10 s - 1.2 A
 



Description

N-channel enhancement mode field-effect transistor BSH121 in a plastic package using TrenchMOS™1 technology.

Product availability: BSH121 in SOT323.




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