BSH112 Selling Leads, Price trend, BSH112 DataSheet download, circuit diagram from SeekIC.com

Features: · TrenchMOS™ technology· Very fast switching· Logic level compatible· Subminiature surface mount package·Gate-source ESD protection diodesApplication· Relay driver·High speed line driver· Logic level translatorPinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. ...

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SeekIC No. : 004302141 Detail

BSH112: Features: · TrenchMOS™ technology· Very fast switching· Logic level compatible· Subminiature surface mount package·Gate-source ESD protection diodesApplication· Relay driver·High speed line dr...

BSH112 Data Sheet

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Part Number:: BSH112
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2025/2/15

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Product Details

Description

Features:

· TrenchMOS™ technology
· Very fast switching
· Logic level compatible
· Subminiature surface mount package
·Gate-source ESD protection diodes

Application

· Relay driver
·High speed line driver
· Logic level translator

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DS	drain-source voltage (DC)	T_j= 25 to 150 °C		60	V
V_DGR	drain-gate voltage (DC)	T_j= 25 to 150 °C; R_GS = 20 k		60	V
V_GS	gate-source voltage (DC)			±15	V
I_D	drain current (DC)	T_sp= 25 °C; V_GS = 10 V; Figure 2 and 3		300	mA
I_D	drain current (DC)	T_sp= 100 °C; V_GS= 10 V; Figure 2		190	mA
I_DM	peak drain current	T_sp = 25 °C; pulsed; tp 10 s;Figure 3		1.2	mA
P_tot	total power dissipation	T_sp= 25 °C; Figure 1		0.83	W


T_stg	storage temperature		-65	+150	°C
T_j	operating junction temperature		-65	+150	°C

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Description

N-channel enhancement mode field-effect transistor BSH112 in a plastic package using TrenchMOS™¹ technology.

Product availability: BSH112 in SOT23.

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BSH112

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