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BSH111

Features: · TrenchMOS™ technology· Very fast switching· Low threshold voltage· Subminiature surface mount package.Application·Battery management· High speed switch·Logic level translator.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-s...

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SeekIC No. : 004302140 Detail

BSH111: Features: · TrenchMOS™ technology· Very fast switching· Low threshold voltage· Subminiature surface mount package.Application·Battery management· High speed switch·Logic level translator.Pinou...

BSH111 Data Sheet

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Part Number:
BSH111
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

· TrenchMOS™ technology
· Very fast switching
· Low threshold voltage
· Subminiature surface mount package.


Application

· Battery management
· High speed switch
·Logic level translator.


Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
 25 °C   Tj   150 °C
55
V

VDGR

drain-gate voltage (DC)

25 °C Tj 150 °C; RGS = 20 k

55

V

VGS
gate-source voltage (DC)
±10
V
ID
drain current (DC)
 Tsp = 25 °C; VGS = 4.5V;
Figure 2 and 3

335

mA

Tsp = 100 °C; VGS = 4.5V; Figure 2

212

 mA
IDM
peak drain current
Tsp = 25 °C; pulsed; tp 10 s;Figure 3
1.3
mA
Ptot
total power dissipation
Tsp = 25 °C; Figure 1
0.83
W
Tstg
storage temperature
-65
+150
°C
Tj
operating junction temperature
-65
+150
°C
.


Description

N-channel enhancement mode field-effect transistor BSH111 in a plastic package using TrenchMOS™ technology.

Product availability: BSH111 in SOT23.


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