BSH111 Selling Leads, Price trend, BSH111 DataSheet download, circuit diagram from SeekIC.com

Features: · TrenchMOS™ technology· Very fast switching· Low threshold voltage· Subminiature surface mount package.Application·Battery management· High speed switch·Logic level translator.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-s...

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SeekIC No. : 004302140 Detail

BSH111: Features: · TrenchMOS™ technology· Very fast switching· Low threshold voltage· Subminiature surface mount package.Application·Battery management· High speed switch·Logic level translator.Pinou...

BSH111 Data Sheet

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Part Number:: BSH111
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/9/27

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Product Details

Description

Features:

· TrenchMOS™ technology
· Very fast switching
· Low threshold voltage
· Subminiature surface mount package.

Application

· Battery management
· High speed switch
·Logic level translator.

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DS	drain-source voltage (DC)	25 °C T_j 150 °C		55	V
V_DGR	drain-gate voltage (DC)	25 °C T_j 150 °C; R_GS = 20 k		55	V
V_GS	gate-source voltage (DC)			±10	V
I_D	drain current (DC)	T_sp= 25 °C; V_GS = 4.5V; Figure 2 and 3		335	mA
I_D	drain current (DC)	T_sp= 100 °C; V_GS= 4.5V; Figure 2		212	mA
I_DM	peak drain current	T_sp = 25 °C; pulsed; tp 10 s;Figure 3		1.3	mA
P_tot	total power dissipation	T_sp= 25 °C; Figure 1		0.83	W


T_stg	storage temperature		-65	+150	°C
T_j	operating junction temperature		-65	+150	°C

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Description

N-channel enhancement mode field-effect transistor BSH111 in a plastic package using TrenchMOS™ technology.

Product availability: BSH111 in SOT23.

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BSH111

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