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BSH108

Features: · TrenchMOS™ technology· Very fast switching· Logic level compatible· Subminiature surface mount package.Application· Battery management· High speed switch· Low power DC to DC converter.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS ...

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SeekIC No. : 004302139 Detail

BSH108: Features: · TrenchMOS™ technology· Very fast switching· Logic level compatible· Subminiature surface mount package.Application· Battery management· High speed switch· Low power DC to DC conver...

BSH108 Data Sheet

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Part Number:
BSH108
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· TrenchMOS™ technology
· Very fast switching
· Logic level compatible
· Subminiature surface mount package.


Application

· Battery management
· High speed switch
· Low power DC to DC converter.


Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
 Tj = 25 to 150 °C
30
V

VDGR

drain-gate voltage (DC)

Tj = 25 to 150 °C; RGS = 20 k

30

V

VGS
gate-source voltage (DC)
±20
V
ID
drain current (DC)
 Tsp = 25 °C; VGS = 5V;
Figure 2 and 3

1.9

mA

Tsp = 100 °C; VGS =5V; Figure 2

1.2

 mA
IDM
peak drain current
Tsp = 25 °C; pulsed; tp 10 s;Figure 3
1.3
mA
Ptot
total power dissipation
Tsp = 25 °C; Figure 1
0.83
W
Tstg
storage temperature
-65
+150
°C
Tj
operating junction temperature
-65
+150
°C
.


Description

N-channel enhancement mode field-effect transistor BSH108 in a plastic package using TrenchMOS™1 technology.

Product availability: BSH108 in SOT23.


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