Application· analog and/or digital switch· switch driver· convertor· chopperPinoutSpecifications Drain-source voltageSource-drain voltageDrain-substrate voltageSource-substrate voltageGate-substrate voltageGate-source voltageDrain current (DC)Total power dissipation up to Tamb = 25 °C(1)Stora...
BSD22: Application· analog and/or digital switch· switch driver· convertor· chopperPinoutSpecifications Drain-source voltageSource-drain voltageDrain-substrate voltageSource-substrate voltageGate-subs...
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Drain-source voltage Source-drain voltage Drain-substrate voltage Source-substrate voltage Gate-substrate voltage Gate-source voltage Drain current (DC) Total power dissipation up to Tamb = 25 °C(1) Storage temperature range Junction temperature |
VDS VSD VDB VSB VGB VGS ID Ptot Tstg Tj |
max. max. max. max. max. max. max. max. max. |
20 20 25 25 ± 15 + 15 - 40 50 230 -65 to + 150 125 |
V V V V V V V mA mW °C °C |
Symmetrical insulated-gate silicon MOS field-effect transistor BSD22 of the n-channel depletion mode type.The transistor is sealed in a SOT143 envelope and features a low ON-resistance and low capacitances.The transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and substrate.