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BS870

Features: · High input impedance· High-speed switching· No minority carrier storage time· CMOS logic compatible input· No thermal runaway· No secondary breakdownSpecifications Symbol Value Unit Drain-Source Voltage VDSS 60 V Drain-Gate Voltage VDGS 60 V Gate-Source Voltage ...

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SeekIC No. : 004302078 Detail

BS870: Features: · High input impedance· High-speed switching· No minority carrier storage time· CMOS logic compatible input· No thermal runaway· No secondary breakdownSpecifications Symbol Value ...

BS870 Data Sheet

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Part Number:
BS870
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/26

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Product Details

Description



Features:

· High input impedance
· High-speed switching
· No minority carrier storage time
· CMOS logic compatible input
· No thermal runaway
· No secondary breakdown




Specifications

Symbol Value Unit
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage VDGS 60 V
Gate-Source Voltage (pulsed) VGS ±20 V
Drain Current (continuous) at TSB = 50 °C ID 250 mA
Power Dissipation at TSB = 50 °C Ptot 0.3101) mW
Junction Temperature Tj 150
Storage Temperature Range TSTG 65 to +150
1) Device on fiberglass substrate, see layout


Part Number BS870
Config/
Polarity		 N
PD
(W)		 0.3
VDSS
(V)		 60
VGSS (+/-)
(V)		 20
ID
(A)		 0.25
RDS(on) Max () @ VGS; 1.8V
RDS(on) Max () @ VGS; 2.5V
RDS(on) Max () @ VGS; 4.0V
RDS(on) Max () @ VGS; 4.5V
RDS(on) Max () @ VGS; 5V
RDS(on) Max () @ VGS; 10.0V 5
VGS(th)
(V)		 3
Ciss (typ)
(pF)		 22
Qg (typ) (nC)
@ VGS; 4.5V
Qg (typ) (nC)
@ VGS; 5V
Qg (typ) (nC)
@ VGS; 10V





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