Features: · High input impedance· High-speed switching· No minority carrier storage time· CMOS logic compatible input· No thermal runaway· No secondary breakdownSpecifications Symbol Value Unit Drain-Source Voltage VDSS 60 V Drain-Gate Voltage VDGS 60 V Gate-Source Voltage ...
BS850: Features: · High input impedance· High-speed switching· No minority carrier storage time· CMOS logic compatible input· No thermal runaway· No secondary breakdownSpecifications Symbol Value ...
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Symbol | Value | Unit | |
Drain-Source Voltage | VDSS | 60 | V |
Drain-Gate Voltage | VDGS | 60 | V |
Gate-Source Voltage (pulsed) | VGS | ± 20 | V |
Drain Current (continuous) | ID | 250 | mA |
Power Dissipation at TSB = 50 °C | Ptot | 0.3101) | W |
Junction Temperature | Tj | 150 | °C |
Storage Temperature Range | TS | 65 to +150 | °C |
1) Device on fiberglass substrate, see layout |