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BS828

Features: · High breakdown voltage· High input impedance· High-speed switching· No minority carrier storage time· CMOS logic compatible input· No thermal runaway· No secondary breakdown· Specially suited for telephone subsetsSpecifications Symbol Value Unit Drain-Source Voltage VDSS ...

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SeekIC No. : 004302075 Detail

BS828: Features: · High breakdown voltage· High input impedance· High-speed switching· No minority carrier storage time· CMOS logic compatible input· No thermal runaway· No secondary breakdown· Specially s...

BS828 Data Sheet

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Part Number:
BS828
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· High breakdown voltage
· High input impedance
· High-speed switching
· No minority carrier storage time
· CMOS logic compatible input
· No thermal runaway
· No secondary breakdown
· Specially suited for telephone subsets


Specifications

  Symbol Value Unit
Drain-Source Voltage VDSS 240 V
Drain-Gate Voltage VDGS 240 V
Gate-Source Voltage (pulsed) VGS ± 20 V
Drain Current (continuous) ID 230 mA
Power Dissipation at TSB = 50 °C Ptot 0.3101) W
Junction Temperature Tj 150 °C
Storage Temperature Range TS 65 to +150 °C
1) Device on fiberglass substrate, see layout



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