MOSFET N-CH 60V 20A TSDSON-8
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Series: | OptiMOS™ | Manufacturer: | Infineon Technologies | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 11.5 dB at 500 MHz | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 60V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 20A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 6.7 mOhm @ 20A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 2.2V @ 35µA | Gate Charge (Qg) @ Vgs: | 62nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 4800pF @ 30V | ||
Power - Max: | 78W | Mounting Type: | Surface Mount | ||
Package / Case: | 8-PowerVDFN | Supplier Device Package: | PG-TSDSON-8 (3.3x3.3) |
Technical/Catalog Information | BS7067N06LS3G |
Vendor | Infineon Technologies (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 20A |
Rds On (Max) @ Id, Vgs | 6.7 mOhm @ 20A, 10V |
Input Capacitance (Ciss) @ Vds | 4800pF @ 30V |
Power - Max | 78W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 62nC @ 10V |
Package / Case | 8-TSDSON |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BS7067N06LS3G BS7067N06LS3G BS7067N06LS3GINCT ND BS7067N06LS3GINCTND BS7067N06LS3GINCT |