BS62UV2006

Features: • Wide Vcc operation voltage : C-grade: 1.8V~3.6V I-grade: 1.9V~3.6V(Vcc_min.=1.65V at 25oC)• Ultra low power consumption : Vcc = 2.0V C-grade : 8mA (Max.) operating current I- grade : 10mA (Max.) operating current 0.20uA (Typ.) CMOS standby current Vcc = 3.0V C-grade : 11mA ...

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BS62UV2006 Picture
SeekIC No. : 004302049 Detail

BS62UV2006: Features: • Wide Vcc operation voltage : C-grade: 1.8V~3.6V I-grade: 1.9V~3.6V(Vcc_min.=1.65V at 25oC)• Ultra low power consumption : Vcc = 2.0V C-grade : 8mA (Max.) operating current I-...

floor Price/Ceiling Price

Part Number:
BS62UV2006
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Description



Features:

• Wide Vcc operation voltage :
                 C-grade: 1.8V~3.6V
                 I-grade: 1.9V~3.6V
                (Vcc_min.=1.65V at 25oC)
• Ultra low power consumption :
     Vcc = 2.0V C-grade : 8mA (Max.) operating current
                       I- grade : 10mA (Max.) operating current
                       0.20uA (Typ.) CMOS standby current
    Vcc = 3.0V C-grade : 11mA (Max.) operating current
                      I- grade : 13mA (Max.) operating current
                      0.30uA (Typ.) CMOS standby current
• High speed access time :
    -85 85ns (Max.)
    -10 100ns (Max.)
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.0V
• Easy expansion with CE2, CE1, and OE options



Pinout

  Connection Diagram


Specifications

SYMBOL
PARAMETER
RATING
UNITS
VTERM
Terminal Voltage with
Respect to GND
-0.5 to
Vcc+0.5
V
TBIAS
Temperature Under Bias
-40 to +85
TSTG
Storage Temperature
-60 to +150
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
20
mA
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.


Description

The BS62UV2006 is a high performance, ultra low power CMOS Static Random Access Memory organized as 262,144 words by 8 bits and operates from a wide range of 1.8V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques of BS62UV2006 provide both high speed and low power features with a typical CMOS standby current of 0.2uA at 2.0V/25oC and maximum access time of 85ns at 85oC.

Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state output drivers.

The BS62UV2006 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.

The BS62UV2006 is available in DICE form, JEDEC standard 32 pin 450mil Plastic SOP, 8mmx13.4mm STSOP and 8mmx20mm TSOP.




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