BS62UV1024

Features:

* Ultra low operation voltage : 1.8V ~ 3.6V
* Ultra low power consumption :
    Vcc = 2.0V  C-grade : 10mA (Max.) operating current
                                       I- grade : 15mA (Max.) operating current
                                       0.01uA (Typ.) CMOS standby current
    Vcc = 3.0V     C-grade : 20mA (Max.) operating current
                                         I- grade : 25mA (Max.) operating current
                                         0.02uA (Typ.) CMOS standby current
* High speed access time :  -15          150ns (Max.) at Vcc = 2.0V
* Automatic power down when chip is deselected
* Three state outputs and TTL compatible
* Fully static operation
* Data retention supply voltage as low as 1.5V
* Easy expansion with CE2, CE1, and OE options


Pinout




Specifications

SYMBOL	PARAMETER	RATING	UNITS
VTERM	Terminal Voltage with Respect to GND	-0.5 toVcc+0.5	V
TBIAS	Temperature Under Bias	-40 to +85	O C
TSTG	Storage Temperature	-60 to +150	O C
PT	Power Dissipation	1.0	W
IOUT	DC Output Current	20	mA

Description

The  BS62UV1024  is  a  high  performance, ultra   low power  CMOS  Static Random Access Memory organized as 131,072 words  by 8 bits and operates from a wide range of 1.8V to 3.6V supply voltage. Advanced  CMOS  technology and circuit techniques provide both high speed and low  power features with a typical CMOS standby current of 0.01uA and maximum access time of 150ns in 2V operation. Easy  memory  expansion of BS62UV1024  is   provided   by  an  active   LOW  chip  enable (CE1),   an  active  HIGH  chip  enable (CE2),  and  active LOW output   enable (OE)  and  three-state output drivers.  The BS62UV1024 has an automatic  power down feature, reducing the power consumption significantly when chip is deselected. The  BS62UV1024   is  available  in  the   JEDEC   standard   32   pin 450mil Plastic SOP,  8mmx13.4mm STSOP 300mil Plastic  SOJ  and  8mmx20mm TSOP.