BS62LV8007EI

Features:

* Vcc operation voltage : 2.7V ~ 3.6V
* Very low power consumption :
Vcc = 3.0V  C-grade: 30mA (@55ns) operating current
                   I -grade:31mA (@55ns) operating current
                 C-grade: 24mA (@70ns) operating current
                  I -grade: 25mA (@70ns) operating current
                  1.5uA (Typ.) CMOS standby current
* High speed access time :
-55          55ns
-70          70ns
* Automatic power down when chip is deselected
* Three state outputs and TTL compatible
* Fully static operation
* Data retention supply voltage as low as 1.5V
* Easy expansion with CE1, CE2 and OE  options


Pinout




Specifications

SYMBOL	PARAMETER	RATING	UNITS
VTERM	Terminal    Voltage    with Resepect to GND	-0.5 to Vcc+0.5	V
TBIAS	Temperature Under Bias	-40 to +85	O C
TSTG	Storage Temperature	-60 to +150	O C
PT	Power Dissipation	1.0	W
I	DC Output Current	20	mA

Description

The BS62LV8007 is a high performance , very low power  CMOS  Static  Random Access Memory  organized  as  1,048,576  words by 8 bits and operates from a range of 2.7V to 3.6V supply voltage.

Advanced CMOS technology and  circuit  techniques  of BS62LV8007EI provide  both high speed and low  power features with a typical  CMOS  standby current  of 1.5uA at 3V/25 C and maximum access time of 55ns at 3.0V/85 C. Easy memory expansion is provided by an active LOW chip enable(CE1) , an active HIGH chip enable (CE2) and active LOW output  enable (OE )  and three-state output drivers.

The BS62LV8007 has an automatic power  down  feature, reducing the power consumption significantly when chip is deselected.The BS62LV8007 is available in 48B BGA and 44L TSOP2 packages.