Features: Vcc operation voltage : 4.5V ~ 5.5V Very low power consumption : Vcc = 5.0V C-grade: 75mA (@55ns) operating current I -grade:76mA (@55ns) operating current C-grade: 60mA (@70ns) operating current I -grade: 61mA (@70ns) operating current 8.0uA (Typ.) CMOS standby current High speed acces...
BS62LV8006ECP55: Features: Vcc operation voltage : 4.5V ~ 5.5V Very low power consumption : Vcc = 5.0V C-grade: 75mA (@55ns) operating current I -grade:76mA (@55ns) operating current C-grade: 60mA (@70ns) operating...
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Features: • Vcc operation voltage : 2.4V ~ 3.6V• Very low power consumption : Vcc = 3....
Features: • Vcc operation voltage : 2.4V ~ 3.6V• Very low power consumption : Vcc = 3....
Features: • Vcc operation voltage : 2.4V ~ 3.6V• Very low power consumption : Vcc = 3....
SYMBOL | PARAMETER | RATING | UNITS |
VTERM | Terminal Voltage with Respect to GND |
-0.5 to Vcc+0.5 |
V |
TBIAS | Temperature Under Bias | -40 to +85 | |
TSTG | Storage Temperature | 60 to +150 | |
PT | Power Dissipation | 1.0 | W |
IOUT | DC Output Current | 20 | mA |
The BS62LV8006 is a high performance , very low power CMOS Static Random Access Memory organized as 1,048,576 words by 8 bits and operates from a range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques of BS62LV8006ECP55 provide both high speed and low power features with a typical CMOS standby current ofo o8.0uA at 5V/25 C and maximum access time of 55ns at 5.0V/85 C.
Easy memory expansion of BS62LV8006ECP55 is provided by an active LOW chip enable(OE1), an active HIGH chip enable (CE2) and active LOW output enable (OE) and three-state output drivers.
The BS62LV8006 has an automatic power down feature, reducing thepower consumption significantly when chip is deselected.
The BS62LV8006 is available in 48B BGA and 44L TSOP2 packages.