BS62LV8006

Features:

* Vcc operation voltage : 4.5V ~ 5.5V
* Very low power consumption :
      Vcc = 5.0V  C-grade: 75mA (@55ns) operating current
                        I -grade:76mA (@55ns) operating current
                        C-grade: 60mA (@70ns) operating current
                        I -grade: 61mA (@70ns) operating current
                        8.0uA (Typ.) CMOS standby current
* High speed access time :
      -55          55ns 
      -70          70ns
* Automatic power down when chip is deselected
* Three state outputs and TTL compatible
* Fully static operation
* Data retention supply voltage as low as 1.5V
* Easy expansion with CE1, CE2 and OE options


Pinout




Specifications

Description

The BS62LV8006 is a high performance , very low power  CMOS  Static  Random Access Memory  organized  as  1,048,576  words by 8 bits and operates from a range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and  circuit  techniques of BS62LV8006 provide  both high speed and low  power features with a typical  CMOS  standby current  of 8.0uA at 5V/25 and maximum access time of 55ns at 5.0V/85.
Easy memory expansion is provided by an active LOW chip enable(CE1), an active HIGH chip enable (CE2) and active LOW output  enable (OE) and three-state output drivers.
The BS62LV8006 has an automatic power  down  feature, reducing the power consumption significantly when chip is deselected.
The BS62LV8006 is available in 48B BGA and 44L TSOP2 packages.