BS62LV8003BI

Features:

• Wide Vcc operation voltage : 2.4V ~ 3.6V
• Very low power consumption :
Vcc = 3V     C-grade: 20mA (Max.) operating current
I -grade: 25mA (Max.) operating current
0.5uA  (Typ.) CMOS standby current     
• High speed access time :
-70          70ns (Max) at Vcc = 3V
-10        100ns (Max) at Vcc = 3V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options

Specifications

Description

The  BS62LV8003  is  a  high  performance,  very   low  power  CMOS Static Random Access Memory organized as 1,048,576 words  by 8 bits and operates from a wide range of 2.4V to 3.6V supply voltage. Advanced  CMOS  technology and circuit techniques provide both high speed and low  power features with a typical CMOS standby current of 0.5uA and maximum access time of 70ns in 3V operation.Easy  memory  expansion  of BS62LV8003BI is   provided   by  an  active  LOW  chip
enable (CE1), an active HIGH chip enable(CE2) and active LOW output   enable (OE)  and  three-state output drivers. The BS62LV8003 has an automatic  power down feature, reducing the power consumption significantly when chip is deselected. The  BS62LV8003 is available in 44 pin TSOP2 and 48-pin BGA type.