Features: * Wide Vcc operation voltage : 2.4V ~ 5.5V * Very low power consumption :Vcc = 3.0V C-grade: 30mA (@55ns) operating current I -grade:31mA (@55ns) operating current C-grade: 24mA (@70ns) operating current I -grade: 25mA (@70ns) operating current 1.5uA (Typ.) CMOS standby currentVcc = 5.0V...
BS62LV8001FI: Features: * Wide Vcc operation voltage : 2.4V ~ 5.5V * Very low power consumption :Vcc = 3.0V C-grade: 30mA (@55ns) operating current I -grade:31mA (@55ns) operating current C-grade: 24mA (@70ns) op...
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Features: • Vcc operation voltage : 2.4V ~ 3.6V• Very low power consumption : Vcc = 3....
Features: • Vcc operation voltage : 2.4V ~ 3.6V• Very low power consumption : Vcc = 3....
Features: • Vcc operation voltage : 2.4V ~ 3.6V• Very low power consumption : Vcc = 3....
SYMBOL | PARAMETER | RATING | UNITS |
VTERM | Terminal Voltage with Resepect to GND | 0.5 to Vcc+0.5 | V |
TBIAS | Temperature Under Bias | -40 to +85 | O C |
TSTG | Storage Temperature | -60 to +150 | O C |
PT | Power Dissipation | 1.0 | W |
I | DC Output Current | 20 | mA |
The BS62LV8001 is a high performance , very low power CMOS Static Random Access Memory organized as 1,048,576 words by 8 bits and
operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques of BS62LV8001FI provide both high speed and low power features with a typical CMOS standby current of 1.5uA at 3V/25 C and maximum access time of 55ns at 3.0V/85 C. Easy memory expansion of BS62LV8001FI is provided by an active LOW chip enable(CE1) , an active HIGH chip enable (CE2) and active LOW output enable (OE) and three-state output drivers.
The BS62LV8001 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.The BS62LV8001 is available in 48B BGA and 44L TSOP2 packages.