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BS62LV8001EI

Features: * Wide Vcc operation voltage : 2.4V ~ 5.5V * Very low power consumption :Vcc = 3.0V C-grade: 30mA (@55ns) operating current I -grade:31mA (@55ns) operating current C-grade: 24mA (@70ns) operating current I -grade: 25mA (@70ns) operating current 1.5uA (Typ.) CMOS standby currentVcc = 5.0V...

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SeekIC No. : 004302025 Detail

BS62LV8001EI: Features: * Wide Vcc operation voltage : 2.4V ~ 5.5V * Very low power consumption :Vcc = 3.0V C-grade: 30mA (@55ns) operating current I -grade:31mA (@55ns) operating current C-grade: 24mA (@70ns) op...

BS62LV8001EI Data Sheet

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Part Number:
BS62LV8001EI
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* Wide Vcc operation voltage : 2.4V ~ 5.5V
* Very low power consumption :
Vcc = 3.0V  C-grade: 30mA (@55ns) operating current
                   I -grade:31mA (@55ns) operating current
                 C-grade: 24mA (@70ns) operating current
                  I -grade: 25mA (@70ns) operating current
                 1.5uA (Typ.) CMOS standby current
Vcc = 5.0V  C-grade: 75mA (@55ns) operating current
                   I -grade:76mA (@55ns) operating current
                  C-grade: 60mA (@70ns) operating current
                   I -grade: 61mA (@70ns) operating current
                  8.0uA (Typ.) CMOS standby current
* High speed access time :
-55          55ns
-70          70ns
* Automatic power down when chip is deselected


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER RATING UNITS
VTERM Terminal    Voltage    with Resepect to GND 0.5 to Vcc+0.5 V
TBIAS Temperature Under Bias -40 to +85 O C
TSTG Storage Temperature -60 to +150 O C
PT Power Dissipation 1.0 W
I DC Output Current 20 mA



Description

The BS62LV8001 is a high performance , very low power  CMOS  Static  Random Access Memory  organized  as  1,048,576  words by 8 bits and 
operates from a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and  circuit  techniques  of BS62LV8001EI provide  both high speed and low  power features with a typical  CMOS  standby current  of 1.5uA at 3V/25 C and maximum access time of 55ns at 3.0V/85 C. Easy memory expansion is provided by an active LOW chip enable(CE1) , an active HIGH chip enable (CE2) and active LOW output  enable (OE)  and three-state output drivers.

The BS62LV8001 has an automatic power  down  feature, reducing the power consumption significantly when chip is deselected.The BS62LV8001 is available in 48B BGA and 44L TSOP2 packages.




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