BS62LV4008EC

Features:

* Vcc operation voltage : 2.4V ~ 3.6V
* Very low power consumption :
Vcc = 3.0V   C-grade: 29mA (@55ns) operating current
                   I -grade: 30mA (@55ns) operating current
                  C-grade:  24mA (@70ns) operating current
                  I -grade: 25mA (@70ns) operating current
                  0.45uA (Typ.) CMOS standby current
* High speed access time :
-55          55ns
-70          70ns
* Automatic power down when chip is deselected
* Fully static operation
* Data retention supply voltage as low as 1.5V
* Easy expansion with CE and OE options
* Three state outputs and TTL compatible


Pinout




Specifications

SYMBOL	PARAMETER	RATING	UNITS
VTERM	Terminal    Voltage    with Resepect to GND	0.5 to Vcc+0.5	V
TBIAS	Temperature Under Bias	-40 to +85	O C
TSTG	Storage Temperature	-60 to +150	O C
PT	Power Dissipation	1.0	W
I	DC Output Current	20	mA

Description

The  BS62LV4008  is  a  high  performance,  very  low  power  CMOS Static Random Access Memory organized as 524,288 words  by 8 bits and operates from a range of 2.4V to 3.6V supply voltage.

Advanced  CMOS  technology and circuit techniques of BS62LV4008EC provide both high speed and low  power features with a typical CMOS standby current of 0.45uA at 3.0V/25and maximum access time of 55ns at 3.0V/85. Easy memory expansion is provided by an active  LOW  chip enable (CE) , and  active  LOW  output  enable (OE)  and   three-state   output   drivers.

The BS62LV4008 has an automatic  power down feature, reducing the power consumption significantly when chip is deselected. The BS62LV4008 is available in the JEDEC standard 32L SOP, TSOP , PDIP, TSOP II and STSOP package.