Features: * Vcc operation voltage : 2.4V ~ 3.6V* Very low power consumption :Vcc = 3.0V C-grade: 22mA (@55ns) operating current I -grade:23mA (@55ns) operating current C-grade:17mA (@70ns) operating current I -grade:18mA (@70ns) operating current 0.3uA(Typ.)CMOSstandbycurrent* High speed access ti...
BS62LV2009SI: Features: * Vcc operation voltage : 2.4V ~ 3.6V* Very low power consumption :Vcc = 3.0V C-grade: 22mA (@55ns) operating current I -grade:23mA (@55ns) operating current C-grade:17mA (@70ns) operating...
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Features: • Vcc operation voltage : 2.4V ~ 3.6V• Very low power consumption : Vcc = 3....
Features: • Vcc operation voltage : 2.4V ~ 3.6V• Very low power consumption : Vcc = 3....
Features: • Vcc operation voltage : 2.4V ~ 3.6V• Very low power consumption : Vcc = 3....
SYMBOL | PARAMETER | RATING | UNITS |
VTERM | Terminal Voltage with Resepect to GND | 0.5 to Vcc+0.5 | V |
TBIAS | Temperature Under Bias | -40 to +85 | O C |
TSTG | Storage Temperature | -60 to +150 | O C |
PT | Power Dissipation | 1.0 | W |
I | DC Output Current | 20 | mA |
The BS62LV2009 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 8 bits and operates from a range of 2.4V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques of BS62LV2009SI provide both high speed and low power features with a typical CMOS standby current of 0.3uA at 3.0V/25 and maximum access time of 55ns at 3.0V/85. Easy memory expansion of BS62LV2009SI is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state output drivers.
The BS62LV2009 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62LV2009 is available in DICE form, JEDEC standard 32 pin 450mil Plastic SOP, 8mmx13.4mm STSOP and 8mmx20mm TSOP.