BS62LV2008SI

Features:

* Vcc operation voltage : 2.4V ~ 3.6V
* Very low power consumption :
Vcc = 3.0V   C-grade: 22mA (@55ns) operating current
                    I -grade:23mA (@55ns) operating current
                  C-grade:17mA (@70ns) operating current
                   I -grade:18mA (@70ns) operating current
                 0.3uA(Typ.)CMOSstandbycurrent
* High speed access time :
-55          55ns
-70          70ns
* Automatic power down when chip is deselected
* Three state outputs and TTL compatible
* Fully static operation
* Data retention supply voltage as low as 1.5V
* Easy expansion with CE2, CE1, and OE options 

Pinout

Specifications

SYMBOL	PARAMETER	RATING	UNITS
VTERM	Terminal    Voltage    with Resepect to GND	0.5 to Vcc+0.5	V
TBIAS	Temperature Under Bias	-40 to +85	O C
TSTG	Storage Temperature	-60 to +150	O C
PT	Power Dissipation	1.0	W
I	DC Output Current	20	mA

Description

The  BS62LV2008  is  a  high  performance, very   low  power   CMOS  Static Random Access Memory organized as  262,144  words by 8 bits and operates from a range of 4.5V to 5.5V supply voltage.

Advanced  CMOS  technology and circuit techniques of BS62LV2008SI provide both high speed and low  power features with a typical CMOS standby current of 1.0uA at 5.0V/25 and maximum access time of  55ns at 5.0V/85. Easy  memory  expansion  of BS62LV2008SI is   provided   by  an  active   LOW  chip enable (CE1),   an  active  HIGH  chip  enable (CE2),  and  active LOW output  enable (OE)  and  three-state  output  drivers.

The BS62LV2008 has an automatic  power down feature, reducing the power consumption significantly when chip is deselected.The  BS62LV2008  is available in DICE form, JEDEC standard  32  pin 450mil  Plastic  SOP, 8mmx13.4mm STSOP  and  8mmx20mm TSOP.