BS62LV1605PCP55

·  Vcc operation voltage : 4.5V ~ 5.5V
·  Very low power consumption :
         Vcc = 5.0V  C-grade: 113mA (@55ns) operating current
                           I -grade:115mA (@55ns) operating current
                           C-grade: 90mA (@70ns) operating current
                           I -grade: 92mA (@70ns) operating current
                           15uA (Typ.) CMOS standby current
·  High speed access time :
         -55          55ns 
         -70          70ns
·  Automatic power down when chip is deselected
·  Three state outputs and TTL compatible
·  Fully static operation
·  Data retention supply voltage as low as 1.5V
·  Easy expansion with CE1, CE2 and OE options

1. Stresses greater than those listed under  ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and  functional  operation of the device at these or any other  conditions above  those  indicated in the operational sections of this  specification is not implied.  Exposure to absolute maximum   rating   conditions  for   extended  periods  may  affect reliability.

The BS62LV1605 is a high performance , very low power  CMOS  Static Random  Access  Memory  organized  as  2048K  words by  8  bits  and operates from a range of 4.5V to 5.5V supply voltage.

Advanced CMOS technology and  circuit  techniques  of BS62LV1605PCP55 provide  both high speed and low  power features with a typical  CMOS  standby current  of 15uA at 5.0V/25oC and maximum access time of  55ns at 5.0V/85oC.

Easy memory expansion of BS62LV1605PCP55 is provided by an active LOW chip enable(CE1) , an active HIGH chip enable (CE2) and active LOW output  enable (OE ) and three-state output drivers.

The BS62LV1605 has an automatic power  down  feature, reducing the power consumption significantly when chip is deselected.

The BS62LV1605 is available in 48B BGA and 44L TSOP2 packages.