BS62LV1603EI

Features:

* Vcc operation voltage : 4.5V ~ 5.5V
* Very low power consumption :
Vcc = 5.0V  C-grade: 113mA (@55ns) operating current
                   I -grade:115mA (@55ns) operating current
                  C-grade: 90mA (@70ns) operating current
                  I -grade: 92mA (@70ns) operating current
                  15uA (Typ.) CMOS standby current
* High speed access time :
-55          55ns
-70          70ns
* Automatic power down when chip is deselected
* Three state outputs and TTL compatible
* Fully static operation
* Data retention supply voltage as low as 1.5V
* Easy expansion with CE1, CE2 and OE options 


Pinout




Specifications

SYMBOL	PARAMETER	RATING	UNITS
VTERM	Terminal    Voltage    with Resepect to GND	0.5 to Vcc+0.5	V
TBIAS	Temperature Under Bias	-40 to +85	O C
TSTG	Storage Temperature	-60 to +150	O C
PT	Power Dissipation	1.0	W
I	DC Output Current	20	mA

Description

The BS62LV1603 is a high performance , very low power  CMOS  Static  Random  Access  Memory  organized  as  2048K  words by  8  bits  and
operates from a range of 2.7V to 3.6V supply voltage.

Advanced CMOS technology and  circuit  techniques of BS62LV1603EI provide  both high speed and low  power features with a typical  CMOS  standby current  of
3.0uA at 3.0V/25oC and maximum access time of  55ns at 3.0V/85oC. Easy memory expansion is provided by an active LOW chip enable(CE1) , an active HIGH chip enable (CE2) and active LOW output  enable (OE)  and three-state output drivers.

The BS62LV1603 has an automatic power  down  feature, reducing the power consumption significantly when chip is deselected. The BS62LV1603 is available in 48B BGA and 44L TSOP2 packages.