BS62LV1029DI

Features:

* Vcc operation voltage : 2.4V ~ 3.6V
* Very low power consumption :
Vcc = 3.0V   C-grade: 22mA (@55ns) operating current
                    I -grade:23mA (@55ns) operating current
                  C-grade:17mA (@70ns) operating current
                   I -grade:18mA (@70ns) operating current
                 0.3uA(Typ.)CMOSstandbycurrent
* High speed access time :
-55          55ns
-70          70ns
* Automatic power down when chip is deselected
* Three state outputs and TTL compatible
* Fully static operation
* Data retention supply voltage as low as 1.5V
* Easy expansion with CE2, CE1, and OE options 


Specifications

SYMBOL	PARAMETER	RATING	UNITS
VTERM	Terminal    Voltage    with Resepect to GND	-0.5 to Vcc+0.5	V
TBIAS	Temperature Under Bias	-40 to +85	O C
TSTG	Storage Temperature	-60 to +150	O C
PT	Power Dissipation	1.0	W
I	DC Output Current	20	mA

Description

The  BS62LV1029  is  a  high  performance, very   low  power   CMOS  Static Random Access Memory organized as 131,072 words  by 8  bits and operates from a range of 4.5V to 5.5V supply voltage.

Advanced CMOS  technology and circuit  techniques of BS62LV1029DI provide both high speed and low  power features with a typical CMOS standby current of 0.6uA at 5V/25 and maximum access time of  55ns at 5V/85. Easy  memory  expansion  of BS62LV1029DI is   provided   by  an  active   LOW  chip enable (CE1),   an  active  HIGH  chip  enable (CE2),  and  active LOW output  enable (OE)  and  three-state  output  drivers.

The  BS62LV1029 has an automatic  power down feature, reducing the power consumption significantly when chip is deselected.The  BS62LV1029 is available in DICE form , JEDEC  standard  32  pin 450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4 mm STSOP and 8mmx20mm TSOP.