BS62LV1027DC

Features:

* Wide Vcc operation voltage : 2.4V ~ 5.5V
* Very low power consumption :
Vcc = 3.0V    C-grade : 17mA (@55ns) operating current
                     I- grade : 18mA (@55ns) operating current
                    C-grade : 14mA (@70ns) operating current
                     I- grade : 15mA (@70ns) operating current
                      0.1uA (Typ.) CMOS standby current
Vcc = 5.0V     C-grade : 46mA (55ns) operating current
                      I- grade : 47mA (55ns) operating current
                     C-grade : 38mA (70ns) operating current
                      I- grade : 39mA (70ns) operating current
                      0.6uA (Typ.) CMOS standby current
* High speed access time :
-55          55ns
-70          70ns
* Automatic power down when chip is deselected


Specifications

SYMBOL	PARAMETER	RATING	UNITS
VTERM	Terminal    Voltage    with Resepect to GND	-0.5 to Vcc+0.5	V
TBIAS	Temperature Under Bias	-40 to +85	O C
TSTG	Storage Temperature	-60 to +150	O C
PT	Power Dissipation	1.0	W
I	DC Output Current	20	mA

Description

The  BS62LV1027  is  a  high  performance, very   low  power   CMOS Static Random Access Memory organized as 131,072 words  by 8  bits and operates from a wide range of  2.4V to 5.5V supply voltage.

Advanced CMOS  technology and circuit  techniques of BS62LV1027DC provide both high speed and low power features with a typical CMOS standby current of 0.1uA at 3V/25 C and maximum access time of  55ns at 3V/85 C. Easy  memory  expansion  of BS62LV1027DC is   provided   by  an  active   LOW  chip  enable (CE1),   an  active  HIGH  chip  enable (CE2),  and  active LOW output  enable (OE))  and  three-state output drivers.

The  BS62LV1027 has an automatic  power down feature, reducing the power consumption significantly when chip is deselected. The  BS62LV1027  is available in DICE form , JEDEC standard  32  pin 450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP,8mm x13.4 mm STSOP and 8mmx20mm TSOP.