BS62LV1025STI

Features:

• Vcc operation voltage : 4.5V ~ 5.5V
• Very low power consumption :
Vcc = 5.0V C-grade : 35mA (Max.) operating current
I- grade : 40mA (Max.) operating current
0.4uA (Typ.) CMOS standby current
• High speed access time :
-55 55ns (Max.) at Vcc = 5.0V
-70 70ns (Max.) at Vcc = 5.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2, CE1, and OE options


Pinout

Specifications

SYMBOL	PARAMETER	RATING	UNITS
VTERM	Terminal Voltage with Respect to GND	-0.5 to Vcc+0.5	V
TBIAS	Temperature Under Bias	-40 to +125
TSTG	Storage Temperature	-60 to +150
PT	Power Dissipation	1.0	W
IOUT	DC Output Current	20	mA

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.


Description

The BS62LV1025 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 8 bits and operates from a wide range of 4.5V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques of BS62LV1025STI provide both high speed and low power features with a typical CMOS standby current of 0.4uA and maximum access time of 55ns in 5V operation.

Easy memory expansion of BS62LV1025STI is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state output drivers.

The BS62LV1025 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.

The BS62LV1025 is available in DICE form, JEDEC standard 32 pin 450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4mm STSOP and 8mmx20mm TSOP.