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BS109

Features: · High input impedance· Low gate threshold voltage· Low drain-source ON resistance· High-speed switching· No minority carrier storage time· CMOS logic compatible input· No thermal runaway· No secondary breakdownSpecifications Symbol Value Unit Drain-Source Voltage VDSS 400 ...

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BS109: Features: · High input impedance· Low gate threshold voltage· Low drain-source ON resistance· High-speed switching· No minority carrier storage time· CMOS logic compatible input· No thermal runaway·...

BS109 Data Sheet

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Part Number:
BS109
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· High input impedance
· Low gate threshold voltage
· Low drain-source ON resistance
· High-speed switching
· No minority carrier storage time
· CMOS logic compatible input
· No thermal runaway
· No secondary breakdown


Specifications

  Symbol Value Unit
Drain-Source Voltage VDSS 400 V
Drain-Gate Voltage VDGS 400 V
Gate-Source Voltage (pulsed) VGS ±20 V
Drain Current (continuous) at Tamb1) = 25 °C, at TSB2) = 50 °C ID 120 A
Power Dissipation at Tamb1) = 25 °C, at TSB2) = 50 °C Ptot 8301) mW
Junction Temperature Tj 150 °C
Storage Temperature Range TS 65 to +150 °C
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case (for TO-92).



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