BS108,126

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Power - Max: 1W
Gate Charge (Qg) @ Vgs: -
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25° C: 300mA
Mounting Type: Through Hole
Manufacturer: NXP Semiconductors
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Input Capacitance (Ciss) @ Vds: 120pF @ 25V
Packaging: Tape & Box (TB)
Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 2.8V


Parameters:

Technical/Catalog Information	BS108,126
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	300mA
Rds On (Max) @ Id, Vgs	5 Ohm @ 100mA, 2.8V
Input Capacitance (Ciss) @ Vds	120pF @ 25V
Power - Max	1W
Packaging	Tape & Box (TB)
Gate Charge (Qg) @ Vgs	-
Package / Case	TO-92-3
FET Feature	Standard
Drawing Number	568; SOT54; ; 5
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BS108,126 BS108,126