BS108ZL1G, US $ .11-.17 , ON Semiconductor, BS108ZL1G DataSheet download, circuit diagram from SeekIC.com

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BS108ZL1G: MOSFET 200V 250mA Logic Level N-Channel

BS108ZL1G Data Sheet

US $ .11~.17 / Piece | Get Latest Price

Part Number:: BS108ZL1G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	0.25 A
Resistance Drain-Source RDS (on) :	8000 mOhms at 2.8 V	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-92	Packaging :	Ammo

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-92
Packaging : Ammo
Continuous Drain Current : 0.25 A
Resistance Drain-Source RDS (on) : 8000 mOhms at 2.8 V

Parameters:

Technical/Catalog Information	BS108ZL1G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	250mA
Rds On (Max) @ Id, Vgs	8 Ohm @ 100mA, 2.8V
Input Capacitance (Ciss) @ Vds	150pF @ 25V
Power - Max	350mW
Packaging	Tape & Box (TB)
Gate Charge (Qg) @ Vgs	-
Package / Case	TO-92-3, TO-226AA (Formed Leads)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BS108ZL1G BS108ZL1G BS108ZL1GOS ND BS108ZL1GOSND BS108ZL1GOS

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BS108ZL1G

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