BS108G

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Packaging : Bulk
Package / Case : TO-92
Continuous Drain Current : 0.25 A
Resistance Drain-Source RDS (on) : 8000 mOhms at 2.8 V


Description

The BS108G is one member of the BS108 series.This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic,microprocessor or TTL to high voltage interface and high voltage display drivers.

Features of the BS108G are:(1)low drive requirement, VGS = 3.0 V max; (2)inherent current sharing capability permits easy paralleling of many devices; (3)Pb-free packages are available.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.

The absolute maximum ratings of the BS108G can be summarized as:(1)operating temperature range:-55 to 150;(2)storage temperature range:-55 to 150;(3total power dissipation@Ta= 25:350mW;(4)drain-source voltage:200V;(5)gate-source voltage:±20 V.Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. SCILLC reserves the right to make changes without further notice to any products herein.SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages."Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts.

Parameters:

Technical/Catalog Information	BS108G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	250mA
Rds On (Max) @ Id, Vgs	8 Ohm @ 100mA, 2.8V
Input Capacitance (Ciss) @ Vds	150pF @ 25V
Power - Max	350mW
Packaging	Bulk
Gate Charge (Qg) @ Vgs	-
Package / Case	TO-92-3, TO-226AA (Straight Leads)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BS108G BS108G