MOSFET N-Chnl 200V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.12 A | ||
Resistance Drain-Source RDS (on) : | 30000 mOhms at 5 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | E-Line | Packaging : | Bulk |
Part Number | BS107P |
Config/ Polarity |
N |
PD (W) |
0.5 |
VDSS (V) |
200 |
VGSS (+/-) (V) |
20 |
ID (A) |
0.12 |
RDS(on) Max() @ VGS; 2.4V | |
RDS(on) Max() @ VGS; 2.5V | |
RDS(on) Max() @ VGS; 2.6V | 23 |
RDS(on) Max() @ VGS; 3V | |
RDS(on) Max() @ VGS; 4.3V | |
RDS(on) Max() @ VGS; 4.5V | |
RDS(on) Max() @ VGS; 5V | 30 |
RDS(on) Max() @ VGS; 6V | |
RDS(on) Max() @ VGS; 10.0V | |
VGS(th) (V) |
|
Ciss (typ) (pF) |
58 |
Qg (typ) (nC) @ VGS;4.5V |
|
Qg (typ) (nC) @ VGS; 10V |
2.7 |
PARAMETER | SYMBOL | VALUE | UNIT |
Drain-Source Voltage | VDS | 200 | V |
Continuous Drain Current at Tamb=25°C | ID | 0.12 | A |
Pulsed Drain Current | IDM | 2 | A |
Gate-Source Voltage | VGS | ±20 | V |
Power Dissipation at Tamb =25°C | Ptot | 500 | mW |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |