BS107P, US $ .27-.55 , Diodes Inc., BS107P DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00150462 Detail

BS107P: MOSFET N-Chnl 200V

BS107P Data Sheet

US $ .27~.55 / Piece | Get Latest Price

Part Number:: BS107P
Mfg:: Diodes Inc.
Supply Ability:: 5000

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	0.12 A
Resistance Drain-Source RDS (on) :	30000 mOhms at 5 V	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	E-Line	Packaging :	Bulk

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Packaging : Bulk
Continuous Drain Current : 0.12 A
Package / Case : E-Line
Resistance Drain-Source RDS (on) : 30000 mOhms at 5 V

Features:

200 Volt VDS
RDS(on)=23W

Specifications

Part Number	BS107P
Config/ Polarity	N
P_D (W)	0.5
V_DSS (V)	200
V_GSS(+/-) (V)	20
I_D (A)	0.12
R_{DS(on) Max}() @ V_GS; 2.4V
R_{DS(on) Max}() @ V_GS; 2.5V
R_{DS(on) Max}() @ V_GS; 2.6V	23
R_{DS(on) Max}() @ V_GS; 3V
R_{DS(on) Max}() @ V_GS; 4.3V
R_{DS(on) Max}() @ V_GS; 4.5V
R_{DS(on) Max}() @ V_GS; 5V	30
R_{DS(on) Max}() @ V_GS; 6V
R_{DS(on) Max}() @ V_GS; 10.0V
V_GS(th) (V)
C_iss(typ) (pF)	58
Qg (typ) (nC) @ V_GS;4.5V
Qg (typ) (nC) @ V_GS; 10V	2.7

PARAMETER	SYMBOL	VALUE	UNIT
Drain-Source Voltage	V_DS	200	V
Continuous Drain Current at Tamb=25°C	I_D	0.12	A
Pulsed Drain Current	I_DM	2	A
Gate-Source Voltage	V_GS	±20	V
Power Dissipation at Tamb =25°C	P_tot	500	mW
Operating and Storage Temperature Range	Tj:T_stg	-55 to +150	°C

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BS107P

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