MOSFET 200V 250mA
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.25 A | ||
Resistance Drain-Source RDS (on) : | 6400 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-92 | Packaging : | Bulk |
Rating | Symbol | Value | Unit |
DrainSource Voltage | VDS | 200 | Vdc |
GateSource Voltage Continuous Nonrepetitive (tp 3 50 ms) |
VGS VGSM |
±20 ±30 |
Vdc Vpk |
Drain Current Continuous (Note 1.) Pulsed (Note 2.) |
ID IDM |
250 500 |
mAdc |
Total Device Dissipation @ TA = 25°C Derate above 25°C |
PD | 350 | mW |
Operating and Storage Junction Temperature Range |
TJ, Tstg | 55 to 150 |