Features: 1) 64 words * 16 bits EEPROM2) Operating voltage range When reading : 2.0 to 5.5V When writing : 2.7 to 5.5V3) Low current consumption Operating (at 5V) : 3mA (Max.) Standby (at 5V) : 5A (Max.)4) Address can be incremented automatically duringread operations.5) Auto erase and auto comple...
BR93LC46RFJ-W: Features: 1) 64 words * 16 bits EEPROM2) Operating voltage range When reading : 2.0 to 5.5V When writing : 2.7 to 5.5V3) Low current consumption Operating (at 5V) : 3mA (Max.) Standby (at 5V) : 5A (...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter |
Symbol |
Limits |
Unit | |
Supply voltage |
VCC |
-0.3 to +6.5 |
V | |
Power dissipation | BR93LC46-W |
Pd |
500 *1 |
mW |
BR93LC46F-W/RF-W/FJ-W/RFJ-W |
350 *2 | |||
300 *3 | ||||
Storage temperature |
Tstg |
-65 to +125 |
°C | |
Operating temperature |
Topr |
-40 to +85 |
°C | |
Terminal voltage |
- |
-0.3 to VCC+0.3 |
V |
The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word of BR93LC46RFJ-W can be accessed individually and data read from it and written to it. Operation control is performed using five types of commands.
The commands, addresses, and data of BR93LC46RFJ-W are input through the DI pin under the control of the CS and SK pins. In a write operation, the internal status signal (READY or BUSY) can be output from the DO pin.