Features: 1) 64 words * 16 bits EEPROM2) Operating voltage range When reading : 2.0 to 5.5V When writing : 2.7 to 5.5V3) Low current consumption Operating (at 5V) : 3mA (Max.) Standby (at 5V) : 5A (Max.)4) Address can be incremented automatically duringread operations.5) Auto erase and auto comple...
BR93LC46FJ-W: Features: 1) 64 words * 16 bits EEPROM2) Operating voltage range When reading : 2.0 to 5.5V When writing : 2.7 to 5.5V3) Low current consumption Operating (at 5V) : 3mA (Max.) Standby (at 5V) : 5A (...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter |
Symbol |
Limits |
Unit | |
Supply voltage |
VCC |
-0.3 to +6.5 |
V | |
Power dissipation | BR93LC46-W |
Pd |
500 *1 |
mW |
BR93LC46F-W/RF-W/FJ-W/RFJ-W |
350 *2 | |||
300 *3 | ||||
Storage temperature |
Tstg |
-65 to +125 |
°C | |
Operating temperature |
Topr |
-40 to +85 |
°C | |
Terminal voltage |
- |
-0.3 to VCC+0.3 |
V |
The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using five types of commands.
The commands, addresses, and data of BR93LC46FJ-W are input through the DI pin under the control of the CS and SK pins. In a write operation, the internal status signal (READY or BUSY) can be output from the DO pin.