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BR24L32-W

IC EEPROM 32KBIT 400KHZ 8DIP

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SeekIC No. : 003559355 Detail

BR24L32-W: IC EEPROM 32KBIT 400KHZ 8DIP

BR24L32-W Data Sheet

floor Price/Ceiling Price

US $ .4~.4 / Piece | Get Latest Price
Part Number:
BR24L32-W
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~2000
  • Unit Price
  • $.4
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Quick Details

Series: - Manufacturer: Rohm Semiconductor
Format - Memory: EEPROMs - Serial Memory Type: EEPROM
Memory Size: 32K (4K x 8) THD plus Noise : 1.5 %, 0.4 %
Speed: 400kHz Interface: I²C, 2-Wire Serial
Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C
Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP    

Description

Series: -
Format - Memory: EEPROMs - Serial
Memory Type: EEPROM
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C
Speed: 400kHz
Interface: I²C, 2-Wire Serial
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Memory Size: 32K (4K x 8)
Manufacturer: Rohm Semiconductor
Supplier Device Package: 8-DIP


Features:

 1) 4k registers * 8 bits serial architecture.
 2) Single power supply (1.8V to 5.5V).
 3) Two wire serial interface.
 4) Automatic erase.
 5) 32byte Page Write Mode.
 6) Low power consumption.
     Write     (5V) : 1.5mA (Typ.)
     Read   (5V) : 0.2mA (Typ.)
     Standby (5V) : 0.1A (Typ.)
 7) DATA security
     Write protect feature (WP pin).
     Inhibit to WRITE at low VCC.
 8) Small package - - - DIP8 / SOP8 / SSOP-B8 pin
 9) High reliability EEPROM with Double-Cell structure.
10) High reliability fine pattern CMOS technology.
11) Endurance : 1,000,000 erase / write cycles
12) Data retention : 40 years
13) Filtered inputs in SCL,SDA for noise suppression.
14) Initial data FFh in all address.


Application

General purpose


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Limits
Unit
Supply voltage
VCC
-0.3 to +6.5
V
Power dissipation
Pd
800(DIP8) *1
mW
450(SOP8) *2
450(SOP-J8) *2
300(SSOP-B8) *3
310(MSOP8) *4
Storage temperature
Tstg
-65 to +125
°C
Operating temperature
Topr
-40 to +85
°C
Terminal voltage
-
-0.3 to VCC+0.3
V

*1     Degradation is done at 8.0mW/°C for operation above 25°C.
*2,3  Degradation is done at 4.5mW/°C for operation above 25°C.
*4     Degradation is done at 3.0mW/°C for operation above 25°C.


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