BPW96

Maximum Power Dissipation :
Maximum Dark Current :
Package / Case :


Features:

Fast response times
High photo sensitivity
Standard T1 _^3/4 (§5 mm) clear plastic package
Angle of half sensitivity = ± 20^o
Suitable for visible and near infrared radiation
Selected into sensitivity groups


Application

Detector in electronic control and drive circuits


Specifications

Parameter	Test Conditions	Symbol	Value	Unit
Collector Emitter Voltage		VCEO	70	V
Emitter Collector Voltage		VECO	5	V
Collector Current		IC	50	mA
Peak Collector Current	tp/T = 0.5, tp 10 ms	ICM	100	mA
Total Power Dissipation	Tamb 47	Ptot	150	mW
Junction Temperature		Tj	100
Storage Temperature Range		Tstg	55...+150
Soldering Temperature	t 3 s	Tsd	260
Thermal Resistance Junction/Ambient		RthJA	350	K/W

Description

BPW96 is a high speed and high sensitive  silicon NPN epitaxial planar phototransistor in a standard T1_^3/4(§ 5 mm) package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.The viewing angle of ± 20 makes it insensible to ambient straylight.