BPW82

Product : PIN Photodiodes
Reverse Voltage : 60 V
Peak Wavelength : 950 nm
Rise Time : 100 ns
Fall Time : 100 ns
Maximum Dark Current : 30 nA
Half Intensity Angle Degrees : 65 deg
Package / Case : Side Looker


Features:

Large radiant sensitive area (A=7.5 mm² )
Wide angle of half sensitivity = ± 65 ^o
High radiant sensitivity
Fast response times
Small junction capacitance
Plastic case with IR filter
Suitable for near infrared radiation
Especially for GaAlAs emitters with _p=870nm




Application

High speed photo detector




Specifications

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Parameter	Test Conditions	Symbol	Value	Unit
Reverse Voltage		VR	60	V
Power Dissipation	Tamb 25	PV	215	mW
Junction Temperature		Tj	100
Storage Temperature Range		Tstg	55...+100
Soldering Temperature	t 5 s	Tsd	260
Thermal Resistance Junction/Ambient		RthJA	350	K/W

Description

Silicon PIN Photodiode, RoHS Compliant

BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters (_p800 nm).


The large active area of BPW82 combined with a flat case gives a high sensitivity at a wide viewing angle.