DescriptionThe BPW41D is a large area, silicon p.i.n. photodiode having a low junction capacitance and consequently capable of fast response times. The BPW41D is therefore eminently suitable for use in I.R. remote control links. The following is about the absolute maximum ratings of BPW41D: (1)re...
BPW41D: DescriptionThe BPW41D is a large area, silicon p.i.n. photodiode having a low junction capacitance and consequently capable of fast response times. The BPW41D is therefore eminently suitable for use...
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The BPW41D is a large area, silicon p.i.n. photodiode having a low junction capacitance and consequently capable of fast response times. The BPW41D is therefore eminently suitable for use in I.R. remote control links.
The following is about the absolute maximum ratings of BPW41D: (1)reverse voltage: 32V; (2)power dissipation: 150mW; (3)storage temperature range: -30 to +80; (4)maximum lead soldering temperature: 245; (5)typical wavelength of peak response: 925nm; (6)typical range of spectral bandwidth: 820 to 1040nm.
The electrical characteristics of the BPW41D are: (1)open-circuit voltage: 400mV at Ev=1000 lux; (2)short-circuit voltage: 70A at Ev=1000 lux, RL=100; (3)absolute seneitivity: 50nA/lux; (4)junction capacitance: 75pF at VR=0, f=1MHz, E=0.