BPV10NF

Product : PIN Photodiodes
Reverse Voltage : 60 V
Half Intensity Angle Degrees : 20 deg
Package / Case : T-1 3/4
Peak Wavelength : 940 nm
Maximum Dark Current : 5 nA
Rise Time : 2.5 ns
Fall Time : 2.5 ns


Features:

*Extra fast response times
*High modulation bandwidth (>100 MHz)
*High radiant sensitivity
*Radiant sensitive area A=0.78mm²
*Low junction capacitance
*Standard T1 ^3/4 ( 5 mm) package with universal IR filter
* Angle of half sensitivity = ± 20




Application

Infrared high speed remote control and free air transmission systems with high modulation frequencies or high data transmission rate requirements , especially for direct point to point links. BPV10NF is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK coded, 450 kHz or 1.3 MHz). Recommended emitter diodes are TSHF 5...series or TSSF 4500.




Specifications

Parameter	Test Conditions	Symbol	Value	Unit
Reverse Voltage		VR	60	V
Power Dissipation	Tamb25	PV	215	mW
Junction Temperature		Tj	100
Operating Temperature Range		Tamb	55...+100
Storage Temperature Range		Tstg	55...+100
Soldering Temperature	2 mm from body, t5 s	Tsd	260
Thermal Resistance Junction/Ambient		RthJA	350	K/W

Description

Silicon PIN Photodiode, RoHS Compliant

BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T1 plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs (=950nm) and GaAlAs (=870nm) IR emitters. BPV10NF is optimized for serial infrared links according to the IrDA standard.